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| Shantou Huashan Electronic Devices Co.,Ltd. HTR1A60 BI-DIRECTIONAL TRIODE THYRISTOR (TRIAC) Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=1A) * High Commutation dv/dt General Description The Triac HTR1A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. Absolute Maximum Ratings Ta=25ae(c) Tstg TJ PGM PG AV(c) Storage Temperature Operating Junction Temperature Peak Gate Power Dissipation Average Gate Power Dissipation Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Gate Voltage Peak Gate Current Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) Ta=58ae(c)- -40~125ae -40~125ae 1W 0.1W 600V 1A 6V 0.5A 9.1/10A VDRM IT RMS(c) VGM IGM ITSM Shantou Huashan Electronic Devices Co.,Ltd. HTR1A60 Electrical Characteristics Ta=25ae(c) Symbol IDRM Items Repetitive Peak Off-state Current Min. Typ. Max. 0.5 Unit mA Conditions VD=VDRM, Single Half Wave, Phase, VTM I+GT1 I-GT1 I-GT3 I+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c Peak On-State Voltage Gate Trigger Currentn(c) Gate Trigger Currento(c) Gate Trigger Currento(c) Gate Trigger Currento(c) Gate Trigger Voltagen(c) Gate Trigger Voltageo(c) Gate Trigger Voltageo(c) Gate Trigger Voltageo(c) Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Holding Current Thermal Resistance Thermal Resistance 0.2 2.0 1.6 5.0 5.0 5.0 10.0 1.8 1.8 1.8 2.0 V mA mA mA mA V V V V V V/S TJ=125ae IT=1.5A, Inst. Measurement VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm TJ=125ae TJ=125ae ,VD=1/2VDRM ,VD=2/3VDRM (di/dt)c=-0.5A/ms IH Rth(j-c) Rth(j-a) 4.0 50 120 ae ae mA /W /W Junction to case Junction to Ambient Shantou Huashan Electronic Devices Co.,Ltd. HTR1A60 Fig 2. On-State Voltage Performance Curves Fig 1. Gate Characteristics Gate Current mA(c) On-state Current [A] Gate Voltage (V) On-state Voltage V(c) Fig 3. Gate Trigger Voltage vs. Junction Temperature Fig 4. On State Current vs. Maximum Power Dissipation Junction Temperature [ae ] Power Dissipation [W] RMS On-state current [A] Fig 5. On State Current vs. Allowable Case Temperature Fig 6. Surge On-State Current Rating ( Non-Repetitive ) C] RMS On-state Current [A] Surge On-state Current [A] Allowable Case Temp. [a Time Cycles(c) Shantou Huashan Electronic Devices Co.,Ltd. HTR1A60 Fig 8. Transient Thermal Impedance Fig 7. Gate Trigger Current vs. Junction Temperature Transient Thermal Junction Temperature [ae ] /W ] Time sec(c) Fig 9. Gate Trigger Characteristics Test Circuit Junction Temperature [ae ] Impedance [ae Time sec(c) Fig 9. Gate Trigger Characteristics Test Circuit 10| 10| 10| 10| Test Proceduren Test Procedureo Test Procedure o Test Procedure o |
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